Bonfring International Journal of Power Systems and Integrated Circuits

Online ISSN: 2277-5072 | Print ISSN: 2250-1088 | Frequency: 4 Issues/Year

Impact Factor: 0.651 | International Scientific Indexing(ISI) calculate based on International Citation Report(ICR)

A Fault Detection Strategy for IGBT Based on Gate-Voltage and Current Transformer Behavior Applied to a Motor Drive System

M. Jemina and V. Ravi

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Abstract:

In this paper, a novel failure-detection technique and its analog circuit for insulated gate bipolar transistors (IGBTs), under open-and short circuit failures, are proposed. This technique is applied to a three-phase induction-motor (IM) drive system. The detection technique is adapted to detect failures of short-circuit and open-circuit in the IGBT, which is based on gate-signal monitoring. The short-circuit is detected by using current transformer and additional zero-crossing circuit. The temperature of the motor winding is detection and feedback is given to the fault-detection system and accordingly the protection schemes are formulated. The most important issue of this technique is the reduction of time for fault detection. This is very important in a failure-tolerant IM drive based on modified Harvard architecture 8-bit RISC single chip microcontroller and protection systems, since the detection must be done before the device is damaged. The experimental test and simulations are presented in order to validate the proposed fault-detection technique, and it is validated, achieving replacement of the damaged element in the most suitable time.

Keywords: Analog Circuits, Driver Circuits, Fault Location, Insulated Gate Bipolar Transistor (IGBTS), Semiconductor-Device Measurements, Time Delay

Volume: 2 | Issue: Special Issue on Communication Technology Interventions for Rural and Social Development

Pages: 09-14

Issue Date: February , 2012